HWS532 gaas 0.5-2.5 ghz x-crossed spdt switch september 2013 preliminary hexawave inc. 2 prosperity road ii, science park, hs inchu, taiwan. tel 886-3- 578-5100 fax 88 6-3-577-0512 http://www.hw.com.tw all specifications are s ubject to change without notice. features ? low insertion loss: 0.4 db @ 1.0 ghz ? high isolation: 26 db @ 2.0 ghz ? single low control voltage: 1.3 to 3.3 v ? no external dc blocking capacitors required ? small uqfn12l (2x2x0.4mm) package using lead (pb) free materials with rohs compliant description the HWS532 is a gaas x-crossed spdt switch operating at 0.5-2.5 ghz in a uqfn12l (2x2x0.4mm) package. the HWS532 features low insertion loss with very low dc power consumption. this switch can be used in wireless mobile systems for transmit/receive or antenna diversity functions. top view vdd vc gnd b1 b2 gnd c2 gnd c1 a2 a1 gnd electrical specifications at 25c with 0, vdd=+2.8v parameter symbol test conditions min. typ. max. unit rf specification insertion loss il c1 to a1/b1 c2 to a2/b2 0.5-1.0 ghz 1.0-2.0 ghz 0.4 0.5 0.5 0.6 db isolation iso c1 to a1/b1 c2 to a2/b2 0.5-1.0 ghz 1.0-2.0 ghz 2.0-2.5 ghz 19 31 26 22 db return loss rl 0.5-2.5 ghz 15 20 db input power for 0.2db compression p0.2db 2.0 ghz 30 dbm 2 nd and 3 rd harmonics pin=+20dbm -70 dbc dc specification supply voltage v dd 1.8 2.8 3.3 v supply current i dd v dd =2.8v 85 ua control voltage high low vc 1.3 0 v dd 0.3 v control current ic 0.5 2 ua switching specification switching time 50% vc to 90/10% rf 10% rf to 90% rf 500 100 ns startup time shutdown to rf state 100 us note: all measurements made in a 50 ohm system with vdd=+2.8v supply voltages, unless otherwise specified.
HWS532 gaas 0.5-2.5 ghz x-crossed spdt switch september 2013 preliminary hexawave inc. 2 prosperity road ii, science park, hs inchu, taiwan. tel 886-3- 578-5100 fax 88 6-3-577-0512 http://www.hw.com.tw all specifications are s ubject to change without notice. typical performance data @+25c with vdd=+2.8v insertion loss vs. frequency 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -1.8 -1.5 -1.2 -0.9 -0.6 -0.3 0.0 insertion loss (db) frequency (ghz) c1 to a1 c2 to a2 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -1.8 -1.5 -1.2 -0.9 -0.6 -0.3 0.0 insertion loss (db) frequency (ghz) c1 to b1 c2 to b2 isolation loss vs. frequency 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -60 -50 -40 -30 -20 -10 0 isolation (db) frequency (ghz) c1 to a1 c2 to a2 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -60 -50 -40 -30 -20 -10 0 isolation (db) frequency (ghz) c1 to b1 c2 to b2 isolation loss vs. frequency (a1 to a2/b1 to b2, on state) 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -60 -50 -40 -30 -20 -10 0 isolation (db) frequency (ghz) a1 to a2(on) b1 to b2(on)
HWS532 gaas 0.5-2.5 ghz x-crossed spdt switch september 2013 preliminary hexawave inc. 2 prosperity road ii, science park, hs inchu, taiwan. tel 886-3- 578-5100 fax 88 6-3-577-0512 http://www.hw.com.tw all specifications are s ubject to change without notice. return loss vs. frequency 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -60 -50 -40 -30 -20 -10 0 return loss (db) frequency (ghz) c1 to a1 c2 to a2 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 2.5 -60 -50 -40 -30 -20 -10 0 return loss (db) frequency (ghz) c1 to b1 c2 to b2 pin configuration rf common port 1 1 2 3 4 5 6 7 8 9 10 11 12 vdd vc gnd b1 b2 gnd c2 gnd c1 gnd a1 a2 rf b port 1 rf a port 1 vc rf a port 2 vdd rf b port 2 rf common port 2 note: no dc block capacitors are required on the rf por ts if dc levels of all rf ports are 0v or open pin #. name description pin #. name description 1 vdd dc power supply 6,8,10 gnd ground 2 vc dc control voltage 7 c2 rf common port (antenna) 3 gnd ground 9 c1 rf common port (antenna) 4 b1 rf port 11 a1 rf port 5 b2 rf port 12 a2 rf port
HWS532 gaas 0.5-2.5 ghz x-crossed spdt switch september 2013 preliminary hexawave inc. 2 prosperity road ii, science park, hs inchu, taiwan. tel 886-3- 578-5100 fax 88 6-3-577-0512 http://www.hw.com.tw all specifications are s ubject to change without notice. logic table for switch on-path vc on path h c1-a1, c2-a2 l c1-b1, c2-b2 ?h? = +1.3v to v dd ?l? = 0v to +0.3v absolute maximum ratings parameter absolute maximum rf input power 0.5-2.5 ghz +31 dbm supply voltage +4v operating temperature -40c to +85c storage temperature -65c to +150c package outline unit: mm
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